Press releases
Modulation beyond 200G for AI/ML and Ethernet applications.
OpenLight’s Post Deadline Paper Th4C.8 at this year’s OFC, covering Modulation beyond 200G, was an exhibition highlight.
The results in the paper show near 400Gbps capability of OpenLight’s Silicon Photonics platform (SiPho). The platform core technology is heterogenous integration of Indium Phosphite (InP) on Silicon, which allows for Electro-Absorption Modulators (EAMs) with modulation bandwidth >63GHz which is far better than conventional SiPho platforms. In addition, low loss silicon waveguide technology enables low optical losses and improves energy efficiency. The heterogeneously integrated InP allows also for direct integration of DFB lasers onto a silicon platform (also demonstrated at OFC), eliminating the need for any form of an external laser and enabling fully integrated extremely high performance, cost effective Photonic Integrated Circuits (PICs), ideal for both AI/ML connectivity and 1.6T Ethernet applications.
In the Post Deadline paper the OpenLight >63GHz bandwidth EAM was used to demonstrate 224Gbps PAM-4, suitable for IEEE Ethernet 1.6Tbps (200G/channel) , for energy efficient transmission. In addition, it showed the following state-of-the-art results:
- 340 Gbps using PAM-4,
- 387Gbps using PAM 6,
- 380 Gbps using PAM-8.
The paper resulted from a three-way collaboration between OpenLight, Riga Technical University and Keysight Technologies, entitled, “Heterogenous InP Electro-Absorption Modulator with Si Waveguides for Beyond 200 Gbps/λ Optical Interconnects”.
Please reach out to info@openlightphotonics.com for more information.
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